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Integrated Vertical Channel JFET and Method of Manufacture

IP.com Disclosure Number: IPCOM000049331D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Gaur, SP Walsh, JL [+details]

Abstract

NPN transistors are incorporated into a semiconductor by means of a self-aligned process which permits the density of the devices to be increased in the substrate. The JFET (junction field-effect transistor) may be adapted to serve as a high resistance load device for a bipolar circuit incorporating the transistors.