Contamination Monitor for Ion Implant Tools
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09
This article describes a method for determining the degree of contamination introduced into an ion-implantation process by the implanting apparatus. The method features building a MOS capacitor test structure by implantation using the apparatus to be characterized, measurement of the test structure's charge retention time, and correlation of the charge retention time measurement to impurity (contamination) level.