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Contamination Monitor for Ion Implant Tools

IP.com Disclosure Number: IPCOM000049334D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Montillo, FJ Poponiak, MR [+details]

Abstract

This article describes a method for determining the degree of contamination introduced into an ion-implantation process by the implanting apparatus. The method features building a MOS capacitor test structure by implantation using the apparatus to be characterized, measurement of the test structure's charge retention time, and correlation of the charge retention time measurement to impurity (contamination) level.