The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
An arrangement is described to provide electrostatic discharge (ESD) protection to chip I/O terminals without the parasitic NPN transistor action which accompanies conventional ESD protection schemes.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
92% of the total text.
Page 1 of 2
ESD Protection Without Parasitic NPN
An arrangement is described to provide electrostatic discharge (ESD)
protection to chip I/O terminals without the parasitic NPN transistor action which
accompanies conventional ESD protection schemes.
Fig. 1A shows a conventional ESD protection device, along with its
associated parasitic NPN transistor 1 (shown by the dashed transistor symbol).
The emitter-base junction of transistor 1 is formed by N(+) region 3 and P
substrate region 5, while the collector-base junction of this transistor is formed by
N(+) region 7 and P substrate region 5. In the schematic representation shown
in Fig. 1B, ESD protect diode 9 corresponds to the emitter-base junction of
Fig. 2A shows an arrangement for ESD protection without a parasitic NPN
transistor. As can be seen, SBD (Schottky barrier diode) contact 11 is made to
the arrangement via N/-/ region 13, with the SBD being in series with the diode
formed by N/+/ region 3' and P/-/ substrate region 5', the latter being grounded
analogously to that described in Fig. 1. A schematic representation of the diode
configuration is shown in Fig. 2B. In this arrangement, one of the diodes will be
on while the other breaks down for any ESD polarity. However, for smaller
operating voltages, such as negative overshoots, one diode will always be
reverse-biased and no parasitic conduction (or NPN) results. The scheme
requires the same chip area as shown in Fig. 1 but results in less parasitic