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Method of Forming Void Free Fillings for Contact Holes

IP.com Disclosure Number: IPCOM000049377D
Original Publication Date: 1982-Apr-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Thirl, KP Trumpp, HJ Zellmer, KH [+details]

Abstract

Contact holes in an Si(3)N(4) and an underlying SiO(2) layer, with thee Si(3)N(4) overhanging the edge of the SiO(2), are filled by evaporating the conductor material after the overhanging Si(3)N(4) has been removed, using a sputter-deposited Pt layer as an etch mask.