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Se1f-Aligned GaAs MESFET Process

IP.com Disclosure Number: IPCOM000049605D
Original Publication Date: 1982-Jun-01
Included in the Prior Art Database: 2005-Feb-09

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Andrade, TL [+details]


A self aligned gallium arsenide metal Schottky gate FET (MESFET) device and process is disclosed which avoids the need for a refractory gate metal structure, which will withstand the heating cycle necessary to activate the source/drain implant.