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Two Phase, Offset Gate, CCD Structure with Two Self Aligned Ion Implants

IP.com Disclosure Number: IPCOM000049715D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Garbarino, PL Neves, F Perlman, DJ Satya, AV [+details]

Abstract

Offset gate charge-coupled devices (CCDs) may be fabricated r using either stepped oxides or ion implants to create storage and transfer regions under a single phase electrode. A variety of design/process considerations point to the ion-implant mode as the most desirable. This method, therefore, is normally employed in creating the two regions under the second set of phase electrodes of the two-phase offset gate structure.