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Method For Controlling Contamination of Czochralski Grown Silicon Wafers Disclosure Number: IPCOM000049719D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09

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Cazcarra, V Garroux, D [+details]


During Czochralski (CZ) wafer processing, it is absolutely necessary to control the contamination caused by certain treatment steps, e.g., Huang cleaning. For that purpose, float-zone (FZ) wafers which have no gettering (resulting from the absence of any kind of contamination) are processed simultaneously with the CZ wafers during any suspected contamination step. Results are interpreted either from minority carrier lifetime measurements or from leakage yields.