Very High Density PROM/ROM Memory Cell in FET Si Gate Technology
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09
This ROM/PROM (read-only memory/programmable read-only memory) y memory cell has no reference line from the data cell. Its layout, comprising a select line intersecting a sense line, is such that, compared to any other existing technology, a minimum bit area is required.