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Very High Density PROM/ROM Memory Cell in FET Si Gate Technology

IP.com Disclosure Number: IPCOM000049729D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Arzubi, LM [+details]

Abstract

This ROM/PROM (read-only memory/programmable read-only memory) y memory cell has no reference line from the data cell. Its layout, comprising a select line intersecting a sense line, is such that, compared to any other existing technology, a minimum bit area is required.