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Applications of Polymides as Lithographic Resists

IP.com Disclosure Number: IPCOM000049790D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Duran, J Hiraoka, H [+details]

Abstract

High temperature flow resistant positive photoresists and negative electron beam resists are made of polyimides like poly (tetramethyl benzidine benzenetetracarboxylic anhydride) and poly(tetramethyl benzidine benzophenone tetracarboxylic anhydride), into which a photoactive compound is dissolved.