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Method for Determining Top and Bottom Dimensions of Lift-Off Resist Disclosure Number: IPCOM000049844D
Original Publication Date: 1982-Jul-01
Included in the Prior Art Database: 2005-Feb-09

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Horkans, WJ Webb, DJ [+details]


In lift-off processes, where the masking photoresist p (Fig. 1) is wider at the top surface than at the interface with the substrates, it is often important to know both the top dimension t and the bottom dimension b of the pattern. Dimension t can be determined by direct observation (microscopy), but some other method must be used to determine dimension b. This article suggests a simple method of making this determination.