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MOSFET Structure Disclosure Number: IPCOM000049992D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09

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Ning, TH Silverstri, VJ Tang, DD [+details]


This article describes a MOSFET structure with minimal parasitics for high performance application. It is also suitable for implementing latch-up free CMOS (complementary MOS) circuits. Fig. 1 shows a cross-sectional view of the new MOSFET structure. A major feature of this structure is that it has buried polysilicon regions 2,3 insulated, for example, by silicon dioxide regions which are disposed over and under regions 2,3.