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Ohmic Contacts to GaAs

IP.com Disclosure Number: IPCOM000049997D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09

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Heiblum, M Nathan, MI Weinberg, Z [+details]


In a thermal annealing process, contact resistivity drops when the density of Ge-Ni rich clusters in a AuGeNi contact increases. The cooling rate after annealing provides a further improvement.