Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Ohmic Contacts to GaAs

IP.com Disclosure Number: IPCOM000049997D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Nathan, MI Weinberg, Z [+details]

Abstract

In a thermal annealing process, contact resistivity drops when the density of Ge-Ni rich clusters in a AuGeNi contact increases. The cooling rate after annealing provides a further improvement.