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High Frequency RF Oxidation Techniques to Fabricate Thermally Stable Josephson Junctions

IP.com Disclosure Number: IPCOM000050001D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-09

Publishing Venue

IBM

Related People

Authors:
Brosious, PR Lee, YH [+details]

Abstract

Oxide growth in an RF oxygen glow discharge has been an important step in the fabrication processes of Josephson junction devices. The current techniques make use of a relatively low RF frequency which requires a high RF voltage and oxygen gas pressure to maintain RF discharge. Under this condition, the lead impurity is sputtered away from a lead-precoated cathode and backscattered in the tunnel barrier during oxide growth. Tunneling currents are reduced by nearly three orders of magnitude with increasing backscattered lead, converting the tunnel barrier from more like In(2)O(3) to more like PbO.