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Novel Approach to Completely Dry Lithography

IP.com Disclosure Number: IPCOM000050106D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Mathad, GS Sachdev, HS Sachdev, KG [+details]

Abstract

This article describes a dry lithography method for patterning a photoresist mask which may subsequently be used in the fabrication of semiconductor devices. Additionally, the article describes resist compositions particularly suited for use in the method described. The method features deposition, exposure and dry developing of the resist which may then be transformed into a SiO(X) type mask on exposure to an oxygen plasma. Resists suited for use in the method feature the inclusion of organic silicon compounds, i.e., silanes.