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Pad Oxide Process for Precipitate Free Zone . Formation

IP.com Disclosure Number: IPCOM000050110D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Garbarino, PL Varano, MF Versusky, JT [+details]

Abstract

Oxygen precipitates with attendant defect structures can, if they occur within the depletion region of a dynamic memory FET array, seriously degrade the hold time of that memory. Recent device results have shown as much as 10 percent yield degradation in 64K-bit memory arrays due to this mechanism.