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Ion Beam Process for Fabricating Dense Josephson Memory

IP.com Disclosure Number: IPCOM000050201D
Original Publication Date: 1982-Sep-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Cuomo, JJ Harper, JME Moore, DF [+details]

Abstract

Use of a directed low energy ion beam improves two essential process steps in the fabrication of Josephson memory cells.