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This is a proposal for the fabrication of low barrier Schottky diodes with an existing ion-implant emitter (I/2/E) process.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
78% of the total text.
Page 1 of 1
Ion Implant Emitter, Low Barrier Schottky Diode Process
This is a proposal for the fabrication of low barrier Schottky diodes with an
existing ion-implant emitter (I/2/E) process.
An existing I/2/E process sequence, which is outlined below, was found not to
be compatible with fabricating low barrier Schottky diodes. During the two mask
steps employed for the I/2/E process, the normal etching of the oxide opens all
contact holes in silicon. Typically, the first mask step opens the contacts over the
thin oxide regions, i.e., the base and emitter, while the second masking operation
opens the contacts over the thick oxide fields, i.e., to the collector and Schottky
regions. Subsequent processing through emitter implant, annealing, platinum
evaporation and heat treating forms the emitter regions and also the collector
and high barrier Schottky diode contacts. With the above process sequence,
however, no oxide remains over the low barrier Schottky region to protect it
during the platinum evaporation process. In this instance, the platinum-silicide
formation on the anode of the low barrier Schottky region would then result in the
formation of a high barrier Schottky device.
To provide adequate oxide passivation over the low barrier Schottky anode
prior to platinum evaporation, an additional masking step is added between the
two-step mask process described above to protect the low barrier Schottky field
The mask used is a "negative" of the actual mask pattern that...