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Ion Implant Emitter, Low Barrier Schottky Diode Process

IP.com Disclosure Number: IPCOM000050295D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Forneris, JL Hrebin, G [+details]

Abstract

This is a proposal for the fabrication of low barrier Schottky diodes with an existing ion-implant emitter (I/2/E) process.