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Improved Ion Implant Emitter Process

IP.com Disclosure Number: IPCOM000050296D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Planck, RE Rozich, WR [+details]

Abstract

This is a proposal for an ion-implant emitter process implementation which allows a sufficient amount of oxide remaining in contact areas to achieve compatibility with low barrier Schottky diodes to be used.