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Planarization Process with Composite Insulators

IP.com Disclosure Number: IPCOM000050310D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Feng, BC Friedman, B Johnson, C Li, PC [+details]

Abstract

Conventional processes which use polyimide as an insulator may not be used on the first level because of reliability concerns. The method described in the following steps can solve this problem and also eliminate other reliability problems relating to polyimide processing. 1) Apply primer coating such as HMDS (hexamethyldisilazane ((CH(3))(3) SiNHSi(CH(3))(3))), etc. 2) Apply a layer of polyimide, polyamide or other heat-resistant organic materials. The thickness of polymide should be that of the metal to be deposited. 3) Apply the following step bakes: 100 degrees C 30' Hot Plate 200 degrees C 30' Hot Plate 300 degrees C 30' Oven with N(2) 400 degrees C 30' Oven without N(2) 4) Plasma deposit Si(x)N(y).