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High Voltage Power Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000050313D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

This is a proposal for the fabrication of an improved high-voltage Schottky barrier diode (SBD) with superior electrical characteristics. Through suitable adaptation of deep dielectric isolation techniques, a maximized reverse breakdown voltage is achieved without adversely impacting the forward voltage characteristic. These Power SBDs allow handling of currents in the range of 10 to 100 A, and withstand reverse voltages of about 20 to 75 V. Fig. 1 conceptually depicts the proposed general SBD structure.