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Low Stress Cap for Gallium Arsenide Annealing

IP.com Disclosure Number: IPCOM000050333D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Andrade, TL [+details]

Abstract

As gallium arsenide is annealed, it dissociates unless a capping layer is provided to prevent this. Most capping layers cause a mechanical stressing on the surface of the gallium arsenide because of a differential coefficient of thermal expansion. The present structure, which is described below, provides an annealing cap with good integrity and also has a minimum differential coefficient of thermal expansion.