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High Speed Non-volatile Memory Element

IP.com Disclosure Number: IPCOM000050405D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Heiblum, M Nathan, MI [+details]

Abstract

A high speed non-volatile memory element is constructed of semiconductor regions that permit quantum mechanical tunneling into a storage region during writing. The structure is as shown in Fig. 1, wherein the symbol E is used for the emitter and B is used for the base. The GaAs layers are doped, and the AlGaAs layers are undoped.