High Speed Non-volatile Memory Element
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10
A high speed non-volatile memory element is constructed of semiconductor regions that permit quantum mechanical tunneling into a storage region during writing. The structure is as shown in Fig. 1, wherein the symbol E is used for the emitter and B is used for the base. The GaAs layers are doped, and the AlGaAs layers are undoped.