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Method for Etching Via Holes in SiO

IP.com Disclosure Number: IPCOM000050412D
Original Publication Date: 1982-Oct-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Gegenwarth, RE [+details]

Abstract

When SiO is deposited by evaporation over thin film patterns having steep edges, the SiO in the vicinity of the step is of a lower density than the remaining SiO and etches more rapidly in HF. This effect is used to etch via holes in SiO.