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Attainment of Either a Narrow or Wide Oxygen Precipitate Free Zone in Silicon Wafers Disclosure Number: IPCOM000050463D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

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Bischoff, BK Patrick, WJ Strudwick, TH [+details]


This article describes a method to obtain controlled narrow oxygen precipitate free zones in silicon wafer processing.