Browse Prior Art Database

Attainment of Either a Narrow or Wide Oxygen Precipitate Free Zone in Silicon Wafers

IP.com Disclosure Number: IPCOM000050463D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Bischoff, BK Patrick, WJ Strudwick, TH [+details]

Abstract

This article describes a method to obtain controlled narrow oxygen precipitate free zones in silicon wafer processing.