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Identifying Transistor Leakage Currents in the Picoampere Range which are Attributable to Defects Disclosure Number: IPCOM000050482D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

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Beck, S Hagmann, D [+details]


As the integration density increases, the margin of tolerable leakage currents in the subnanoampere range of integrated transistors becomes smaller and smaller. At the same time, the yield requirements with regard to leakage currents are increased, so that the defect probability is of the order of w = 10/-5/ for each device.