Process for Metal Patterning Using Silicon Layer Mask Defined by Reactive Ion Etching Through Photoresist Pattern
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10
During the final steps of integrated circuit fabrication, the connection to other devices is usually formed by depositing and patterning a layer of aluminum doped with both copper and silicon. The copper-doped aluminum layer is formed into a pattern of conductors by etching through a mask formed by an overlying layer of silicon. The silicon layer is formed to a desired mask configuration by a dry etching process, such as reactive ion etching, through a photoresist pattern. The process gives good line definition and provides high yield.