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Process for Metal Patterning Using Silicon Layer Mask Defined by Reactive Ion Etching Through Photoresist Pattern

IP.com Disclosure Number: IPCOM000050485D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Aboelfotoh, MO Masud, C Polcari, MR [+details]

Abstract

During the final steps of integrated circuit fabrication, the connection to other devices is usually formed by depositing and patterning a layer of aluminum doped with both copper and silicon. The copper-doped aluminum layer is formed into a pattern of conductors by etching through a mask formed by an overlying layer of silicon. The silicon layer is formed to a desired mask configuration by a dry etching process, such as reactive ion etching, through a photoresist pattern. The process gives good line definition and provides high yield.