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Doped Trench Isolation Process

IP.com Disclosure Number: IPCOM000050637D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Silverman, RR [+details]

Abstract

A process is provided for doping the sidewalls and bottom of a trench formed in a semiconductor substrate, which is particularly useful for field-effect transistor (FET) isolation.