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Thermal Photovoltage Decay

IP.com Disclosure Number: IPCOM000050642D
Original Publication Date: 1982-Nov-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Fung, M [+details]

Abstract

A method of determining trapping centers or metallic contaminants in semiconductor wafers is provided which is rapid and non-destructive. The method determines trapping centers or metallic contaminants in, e.g., silicon wafers with a PN junction by the thermal behavior of open-circuit photovoltage decay through non-contact inductive or capacitive sensing techniques and is an alternative to the methods disclosed in (1, 2).