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Semi-insulating gallium arsenide may be put to use as a resistive load material for low power latches in gallium arsenide integrated circuits.
English (United States)
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Gallium Arsenide Latch with Bulk Material Loads
Semi-insulating gallium arsenide may be put to use as a resistive load
material for low power latches in gallium arsenide integrated circuits.
Fig. 1 is a schematic diagram of a gallium arsenide MESFET
inverter circuit with a resistive load 1 and the MESFET 2 connected,
as shown, between +V potential and ground. Fig. 2 illustrates a top
view of the inverter circuit of Fig. 1, showing the bulk material
load 1 and the MESFET device 2. The bulk material load 1 is made of
metal capable of forming an ohmic contact with the gallium arsenide
bulk material 6. The load device 1 has a first terminal 4 connected
to +V potential and a second terminal 5 connected to the output node.
The first terminal 4 and second terminal 5 are separated by a
distance d, as shown in the cross-sectional view of Fig. 3. The
semi-insulating gallium arsenide bulk material 6 typically has a
resistivity in the range of 10/7/ to 10/8/ ohm centimeters.
Therefore, the desired resistance which the load 1 is to apply in the
inverter circuit by means of forcing the current to flow from the
electrode 4, through the bulk material 6 over the distance d, to the
electrode 5, can be calculated.
The MESFET device 2, shown in Fig. 2, is of a conventional design wherein
the H-type diffused region 61 serves as the MESFET channel medium. The
ohmic electrode 7 makes contact and serves as the drain, and the ohmic material
9 makes contact with the diffused region 6' and...