Browse Prior Art Database

Eliminating Semiconductor Device Degradation due to Positive Ion Accumulation

IP.com Disclosure Number: IPCOM000050691D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Carlson, HA Henry, BC [+details]

Abstract

The deleterious effects of positive ions in the passivation layers of semiconductor devices can be eliminated by exposing the devices to an oxygen plasma (as in plasma asher) at the appropriate stage of manufacturing.