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Practical Selective Epitaxial Process for Oxide Isolation

IP.com Disclosure Number: IPCOM000050744D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Silvestri, VJ Tang, DD [+details]

Abstract

This article relates generally to processes for integrated circuit fabrication and more specifically to a selective epitaxial process for oxide isolation. The process includes steps for producing planar selective epitaxy which incorporates frontside gettering to improve epitaxial quality and for forming the epitaxy in a self aligned fashion such that the site can be opened repeatedly.