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Reducing the Device Size of Polysilicon Base Transistor

IP.com Disclosure Number: IPCOM000051022D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10

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Jambotkar, CG [+details]


Two methods are disclosed to reduce the size of a shallow-junction "poly-base" transistor. Both methods achieve this by situating the emitter and collector reachthrough/collector contact windows close to each other in a self aligned manner.