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Method of Fabricating a Compact Transistor Structure

IP.com Disclosure Number: IPCOM000051024D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Jambotkar, CG [+details]

Abstract

This is a proposal for a very compact bipolar transistor structure with polysilicon base and collector contacts. A method for realizing this transistor structure is described with reference to Figs. 1-7, with a cross-section of the resulting transistor structure being shown in Fig. 7. Geometries of some of the important masks that are used in the described method are shown in Fig. 8.