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Subcollector Formation Technique

IP.com Disclosure Number: IPCOM000051059D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Cain, OJ Kamal, M [+details]

Abstract

A technique for forming a subcollector or highly conductive region below the surface of a semiconductor structure includes an increased concentration of dopant gas, such as arsenic, during the early stage of growth of an epitaxial layer on a semiconductor substrate.