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Plasma Planarization Using Differential Etch Rate Ratio

IP.com Disclosure Number: IPCOM000051063D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Kaminsky, E Magill, PJ Smith, CF [+details]

Abstract

A plasma planarization process uses a differential (glass to organic) etch-rate ratio in lieu of a conventional 1:1 ratio to improve the smoothness, i.e., flatness or planarity, of the glass insulation which covers the conductors of an integrated circuit (IC) member. Plasma planarization is described, for example, by A. C. Adams, in "Plasma Planarization, Solid State Technology, April 1981, pages 178-181.