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Ion Gun Deposited Diffusion Source Layers

IP.com Disclosure Number: IPCOM000051090D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Bojarczuk, NA Campbell, DR Michel, AE [+details]

Abstract

The new generation of bipolar transistors will be fabricated with increasingly shallower vertical structures and require new methods offering improved process control. Present technology uses implanted-diffused or directly Implanted profiles which offer excellent control over the quantity of dopant introduced, but suffer from damaged enhanced diffusion and/or channeling effects which create an unacceptable amount of profile broadening. Diffused profiles do not have these drawbacks, and in this sense are more easily controlled. However, conventional diffusion sources cannot be employed because they lack the necessary precision in the quantity of dopant that becomes incorporated into the profile.