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Short Channel Length Scheme to Reduce Poly 1 to 2 Shorts Using a Silicon Sidewall Oxidation Technology

IP.com Disclosure Number: IPCOM000051092D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

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Barbee, SG Gaind, AK [+details]


The following scheme is proposed to eliminate in a double polysilicon technology the problem of thin first level polysilicon (poly 1) side walls which can cause poly 1/poly 2 shorts. The primary virtue of the technique is a very thick (/>/- 300 nm) sidewall oxide. A spin-off benefit is the reduction of the poly 1 device channel length by the sidewall oxide thickness. This compensates for the addition of a thin (5 to 10 nm) Si(3)N(4) layer in the poly 1 gate area.