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Polysilicon Resistor Fabrication Technique for Bipolar Integrated Circuits

IP.com Disclosure Number: IPCOM000051099D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Lee, CH [+details]

Abstract

Described is a poly-Si resistor fabrication technique which is compatible with standard bipolar manufacturing technology. This process provides poly-Si resistors of low temperature and voltage coefficients as well as high resistor values for low standby power circuits, resulting in performance improvement. The proposed dopants for this process are P and As for the resistor and the resistor contact doping, respectively. Group V elements have been popularly used for collector contact and emitter doping in bipolar transistor structures. N type doping of high concentration was found effective to prevent resistor degradation during metallization. The process is outlined with reference to the drawings.