Method of Determining the Distribution of Defects on Semiconductor Surfaces During High Dose Ion Implantation
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10
The method is based on an oxidation process, to which implanted test wafers are subjected, and the subsequent etching of the semiconductor surface by a suitable etchant which preferably attacks defects. The resultant surface roughness is observed in the stray light of a projector and can be photographed, if required.