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Method of Determining the Distribution of Defects on Semiconductor Surfaces During High Dose Ion Implantation

IP.com Disclosure Number: IPCOM000051113D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

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Brack, K Hagmann, D [+details]


The method is based on an oxidation process, to which implanted test wafers are subjected, and the subsequent etching of the semiconductor surface by a suitable etchant which preferably attacks defects. The resultant surface roughness is observed in the stray light of a projector and can be photographed, if required.