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Uniformity Improvement in the RF Plasma Process

IP.com Disclosure Number: IPCOM000051199D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Bright, AA Brosious, PR Castellani, EE Lee, YH [+details]

Abstract

Where uniform treatment across a wafer dimension is essential for the LSI fabrication process, RF-plasma processes have been widely used for thin-film growth sputter etching and reactive ion etching. In Josephson technology, an 0(2) plasma is utilized to grow a very thin tunnel barrier oxide and one of the most important aspects to be iMproved is a uniform distribution of the tunnel current over the wafer which requires precise control of the barrier thickness within an accuracy of less than one atomic layer.