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Browse Prior Art Database

Electron-Beam Resist Developers

IP.com Disclosure Number: IPCOM000051368D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Chiu, GT Fredericks, EC [+details]

Abstract

Adding small amounts of oxidizing agents to resist developers slows dow the dissolution rate of unexposed positive resist layers in high pattern factor areas which are subject to large proximity effects due to electron backscattering.