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Static Ram Double Polysilicon Process Disclosure Number: IPCOM000051371D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

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Baran, AS Cordaro, W Dockerty, RC Jones, FD Regh, J Zeidenbergs, J [+details]


This process allows static components such as high sheet rho polysilico resistors to be formed over active insulated gate field-effect transistor devices and stacking contacts on top of each other. The process is a modification of the conventional double polycrystalline silicon process and requires one additional mask.