Static Ram Double Polysilicon Process
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
This process allows static components such as high sheet rho polysilico resistors to be formed over active insulated gate field-effect transistor devices and stacking contacts on top of each other. The process is a modification of the conventional double polycrystalline silicon process and requires one additional mask.