Browse Prior Art Database

Static Ram Double Polysilicon Process

IP.com Disclosure Number: IPCOM000051371D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Baran, AS Cordaro, W Dockerty, RC Jones, FD Regh, J Zeidenbergs, J [+details]

Abstract

This process allows static components such as high sheet rho polysilico resistors to be formed over active insulated gate field-effect transistor devices and stacking contacts on top of each other. The process is a modification of the conventional double polycrystalline silicon process and requires one additional mask.