Self-Aligned, Nitride Passivated, Emitter Compensated, High Gain Bipolar Devices
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
As shown in Fig. 1, resist mask 1 is formed on a 1600 angstroms thick s dioxide layer 2 which is formed by reoxidation of epitaxial silicon grown on P type silicon substrate 3 which contains N+ subcollector 4, recessed oxide isolation regions 5 and P+ isolation regions 6. N+ reach-through region 7 is ion-implanted through layer 2, using resist mask 1, to contact the N+ subcollector 4.