The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Palladium Silicide Contact Resistance and Yield Improvement

IP.com Disclosure Number: IPCOM000051375D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue


Related People

Kumar, AH Sugerman, A [+details]


In the fabrication of very dense integrated circuits requiring a large number of contacts, high contact resistance due to residual oxide is a yield detractor.