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Palladium Silicide Contact Resistance and Yield Improvement

IP.com Disclosure Number: IPCOM000051375D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Kumar, AH Sugerman, A [+details]

Abstract

In the fabrication of very dense integrated circuits requiring a large number of contacts, high contact resistance due to residual oxide is a yield detractor.