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A sintered layer of glass or ceramic on the back side of a solder-bonded chip immersed in a cooling liquid provides a nucleating surface that significantly improves cooling efficiency.
English (United States)
This text was extracted from a PDF file.
This is the abbreviated version, containing approximately
88% of the total text.
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Structure for Enhancing Thermal Nucleation of Semiconductor Devices
A sintered layer of glass or ceramic on the back side of a solder-bonded chip
immersed in a cooling liquid provides a nucleating surface that significantly
improves cooling efficiency.
To insure proper and continued operation of a device chip, the heat
generated during the operation of the chip must be removed. A technique for
removing heat is to immerse the chip in a suitable coolant. This approach works
efficiently only when the back side of the chip facing the coolant has sufficient
thermal nucleation sites to insure continuous nucleating boiling at the required
temperature. A smooth, polished silicon surface does not have an adequate
number of nucleation sites. A roughening of the surface by sand blasting or
etching increases the number of nucleation sites. However, these techniques
and others increase the probability of causing defects in the crystalline structure
which could cause failure of the device over long operating periods.
In this structure an adequately nucleating surface is generated on the back
side of the chip by depositing a sintered layer of glass or ceramic. A low melting
glass combined with terpineol to form a paste can be applied to the back side of
the chip, dried at approximately 200 degrees C, and then fired for 3 hours at 500
degrees C. The resulting surfa very porous and nucleates very well in
perfluorohexane. Another approach for providing a nucleating surface is to