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Single Layer Photoresist Profiling

IP.com Disclosure Number: IPCOM000051393D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

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Bohlen, H Greschner, J Trumpp, HJ [+details]


This article describes a method which permits different laterally structured resist profiles to be generated by means of a single resist layer. By this method one resist layer is partially stabilized with the aid of electron beam radiation. Subsequently, the whole resist layer is subjected to post-baking. Dry etching allows imaging of the steep and rounded resist profile into underlying layers.