Dry Etch Rate Control of Photoresist by E-Beam Exposure
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
It has been found that etch properties of positive E-beam photoresist are altered when it is exposed to electron irradiation. This effect can be used (a) for resist pattern reversal and (b) to obtain steep edges in plasma-etched profiles.