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Dry Etch Rate Control of Photoresist by E-Beam Exposure

IP.com Disclosure Number: IPCOM000051465D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Forster, T [+details]

Abstract

It has been found that etch properties of positive E-beam photoresist are altered when it is exposed to electron irradiation. This effect can be used (a) for resist pattern reversal and (b) to obtain steep edges in plasma-etched profiles.