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Optimized Fabrication Process for Restoring Performance of Bipolar Transistors

IP.com Disclosure Number: IPCOM000051583D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10

Publishing Venue

IBM

Related People

Authors:
Nagarajan, A Vargas, AA [+details]

Abstract

A low-cost and simple process for the fabrication of bipolar semicondu devices is to eliminate the usual recessed oxide isolation and to use an additional Ptop isolation. The elimination of recessed oxide isolation also removes the need for the deposition of a silicon nitride layer, which acts as an oxidation barrier for recessed oxide isolation oxidation.