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Method of Producing Silicon Dioxide Layers with Uniform Thickness

IP.com Disclosure Number: IPCOM000051591D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10

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Schmitt, A [+details]


This invention is based on the concept that oxidation in dry oxygen yields particularly uniform oxide thicknesses if the silicon wafer, prior to oxidation, is cleaned at low temperature in an oxygen atmosphere, using an addition of halogenated hydrocarbons.