Method of Determining the Silicon/Nitrogen Ratio in SiN(x) Films and their Bulk Resistivity
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10
The silicon/nitrogen atomic ratio in SiN(x) films produced by plasma-enhanced chemical vapor deposition (PECVD) and their bulk resistivity are determined by means of the appertaining refractive indices (n), using the diagram shown above. The refractive indices are ellipsometrically measured.